Capture of electrons into Na+-related trapping sites in the SiO2 layer of MOS structures at 77 °K

Sodium ions in the SiO2 layer of MOS structures have been completely neutralized at liquid-nitrogen temperatures (77 °K) by avalanche injection of electrons from the Si substrate. Three principal electron capture cross sections (2×10−15, 2×10−19, and 5×10−20 cm2) associated with ionic sodium (Na+) contamination have been observed.