Direct Observation of Doping Sites in Temperature‐Controlled, p‐Doped P3HT Thin Films by Conducting Atomic Force Microscopy

The distribution of dopant sites in doped poly(3-hexylthiophene) (P3HT) thin films is characterized using optical absorption, grazing-incidence X-ray diffraction, and conducting atomic force microscopy (c-AFM). It is shown that dopant sites can be directly observed using c-AFM and that the solution temperature dramatically impacts phase separation and conductivity in spin-cast films.