A Ga and As contamination layer formed on the corrugated InP substrate during the LPE growth process of DFB lasers is analyzed using the synchrotron radiation-excited X-ray fluorescence. Quantitative analysis shows that the concentrations of Ga and As are in the order of 10 14 atoms/cm 2 and both impurities are localized less than 50 Å from the surface. The effect of the surface corrugation on the quantitative analysis is also discussed.
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Iida et al. (1988) studied this question.
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