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Cd-free kesterite-based Cu 2 ZnSnSe 4 (CZTSe)/In 2 S 3 champion solar cell of 5.74% efficiency has been fabricated by chemical spray pyrolysis. In this fabrication route, CZTSe absorber layer was sprayed by using a precursor solution, where metallic salts were dissolved in water-based solvent and subsequently selenized with Se powder at high temperature. In 2 S 3 buffer as an alternative to CdS buffer was also deposited by chemical spray pyrolysis. The device characteristics were studied by measuring dark/light illuminated J – V – T, external quantum efficiency, temperature dependence of open circuit voltage ( V OC ) and series resistance ( R s ), and admittance spectroscopy. The performance of sprayed CZTSe/In 2 S 3 solar cell was found to be limited by high back-contact barrier potential, poor carrier collection, and detrimental intrinsic defect states in device.
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Khadka et al. (2015) studied this question.
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