In this letter, we report on gate quality Si3N4/Si/n-In0.53Ga0.47As capacitors representing significant improvement over that which has been previously obtained. These capacitors are formed by in situ nitride and Si layer deposition on as-grown molecular-beam epitaxy structure and are characterized by a small frequency dispersion, small hysteresis, a flat band voltage close to zero, and a minimum interface trap density of 2.4×1011 eV−1 cm−2.
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Wang et al. (1992) studied this question.
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