Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser Grown by MBE

GaAlAs/GaAs surface emitting (SE) junction lasers have been fabricated by molecular beam epitaxy (MBE). It is easy for the MBE method to obtain a good flatness of grown surfaces to be utilized as reflective mirrors, and to control the thickness of the grown layer more precisely, compared with liquid phase epitaxy (LPE). We report on the room-temperature pulsed oscillation of a SE laser grown by MBE. The threshold current was as low as 450 mA, and single-mode operation was achieved at λ = 8735 Å.