Lifetime of InGaAsP–InP and AlGaAs–GaAs DH Lasers Estimated by the Point Defect Generation Model

Ageing characteristics of conventional double heterostructure lasers have been explained by extending the defect model proposed in connection with remote junction heterostructure lasers. Two major phenomena are responsible for laser degradation: One is that mobile defects remaining in the cladding layer before ageing move toward the pn junction and accumulate there during ageing. Another component is due to the mobile defects created in the active region by the non-radiative recombination of injected carriers. Using this model, the ultimate lifetime of InGaAsP–InP lasers was, for the first time, concluded to be far longer than that of AlGaAs–GaAs lasers.