Radiation patterns for optically steered semiconductor laser-beam scanner

The implementation of an all-optical scanning function utilizing twin-stripe injection lasers is discussed. Calculation are performed for 3-μm wide stripe devices allowing for stripe separations of 1 and 3 μm. The effect of optical injection under one of the stripes is computed for different injection currents. It is shown that the change in the gain profile brought about by optical injection leads to a rotation in the device far field. The merits of electronic and optical beam steering are briefly compared.