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At clean cleaved silicon (111) surfaces an “oscillatory” photo conductance with excitation of holes out of surface states has been reported [1]. The period of the oscillations is (58 ± 3) meV. A surface phonon (hω s = (56 ± 1) meV) has been found on the same type of surfaces in low energy electron spectroscopy [7]. It is shown that the oscillations in the photoconductivity are caused by the interaction of photoexcited hot holes with the surface phonon.
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Ibach et al. (1973) studied this question.
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