A perfect semiconductor surface produces a potential associated with the translational motion of excitons. This potential is calculated including contributions from both short and long range forces. The relative motion of electron and hole is studied by a variational method and by asymptotic estimates. The potential is used for a detailed description of the exciton free layer and the macroscopic boundary condition relevant for explaining spectra of dispersive resonances. The agreement with previously reported experiments encourages to further studies of the influence of clean surfaces on excitonic phenomena.
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I. Balslev (1978) studied this question.
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