Alternative mechanisms for the diffusion of Sn and Zn in GaAs

It is shown that diffusion by the singly ionised donor associate (ZnGaVAs)˙ gives rise to the same diffusion properties of Zn in GaAs as do the Longini and Gösele-Morehead models. In the case of Sn diffusion in GaAs it is found that diffusion by the singly ionised acceptor associate (SnAsVGaVGa)' can account for the presently known diffusion properties of Sn. Experimental results give the diffusivity of the (SnAsVGaVGa)' associate as 1.2 × 10−3 exp (−2.5 eV/kT) cm2s−1.