The electrical properties and the chemical Sn content of liquid phase epitaxial GaAs grown from tin solution were investigated as function of the growth temperature (500 to 1000 °C) and the substrate orientation ((001), (111) A, (111)B). A mean electron concentration of n ≈︁ 8 × 1018 cm−3 is found to be independent of growth temperature and substrate orientation. The Sn concentration NSn in the solid phase and the electrically determined net impurity concentration ND + NA are also independent of the growth temperature where always the relation holds n < NSn < ND + NA. The calculated effective tin distribution coefficient in GaAs shows the expected temperature dependence with the substrate orientation dependence keff((001)) ≈︁ keff((111)A) < keff((111)B).
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Neumann et al. (1975) studied this question.
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