A process for producing In 2 O 3 layers from indium is described. The preparation technique involves the thermal decomposition of InCl 3 in an oxidizing atmosphere in a suitable furnace. A differential technique has been used to investigate the fundamental absorption edge in this material. The absorption data are interpreted as direct allowed (3.55 eV) and indirect forbidden (2.4 eV) transitions.
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Agnihotri et al. (1977) studied this question.
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