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An AlxGa1−xAs-AlyGa1−yAs double-heterostructure (DH) superluminescent diode (SLD) having an unpumped absorbing region has shown laser oscillation with a long time delay, amounting to as much as microseconds at a low pumping level. It has been confirmed that this lasing is made possible by two types of band-gap shrinkage, one resulting from the many-body interaction of excited carriers and the other from the temperature rise in the excited region.
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Iwamoto et al. (1977) studied this question.
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