Photoluminescence and Hall-effect measurements on neutron transmutation doped liquid-phase-epitaxial GaAs layers were performed. The obtained results clearly point out that at least a part of the Ge atoms introduced by transmutation of Ga leave their original lattice site behaving as acceptors. The probable cause of these displacements are the recoils during γ and β emissions from the unstable Ga isotopes.
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Garrido et al. (1985) studied this question.