Thermoelectric power, electrical resistivity, and Hall effect of p-type Bi2—xSnxTe3 (0 ≤ x ≤ 0.030) single crystals have been measured in the temperature range 4.2 to 300 K. By doping Sn atoms into the host Bi2Te3 lattice, enhancements in the thermopower and resistivity are observed in the intermediate temperature range 30 to 150 K, and activation type behaviors are found in the resistivity versus temperature curves with an activation energy of the order of 10 meV which corresponds to the Sn-induced impurity band located above the second lower valence band. For our experimental results, we have also given a qualitative discussion about the scattering mechanism.
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Kulbachinskiı̆ et al. (1997) studied this question.