The Thermoelectric Power of p‐Ge at Low Temperatures

The thermoelectric power of lightly doped p‐Ge is measured in the temperature range of 5 to 300 K for the investigation of phonon scattering. The application of a simple theoretical model requires some knowledge of the dominant carrier scattering processes obtained by measurements of electrical conductivity and Hall effect. In terms of that model, the temperature dependence of the phonon drag part of the thermoelectric power can be attributed to only two phonon scattering processes: phonon‐phonon scattering at higher temperatures and phonon‐boundary scattering at lower temperatures. The constant phonon relaxation time of boundary scattering and its dependence on sample diameter has been observed at temperatures below 10 K.