We employ the organic semiconductor 3,4,9,10-perylene-tetracarboxylic-dianhydride (PTCDA) as a nanometer thick window layer for p-InP/indium tin oxide (ITO) Schottky barrier diode solar cells. The power conversion efficiency is enhanced compared to ITO/InP cells lacking the PTCDA window layer, primarily due to neutralizing InP surface state charges via hole injection from the PTCDA. This leads to an increased ITO/p-InP Schottky barrier height, and hence to an increased open circuit voltage. The power conversion efficiency of the cells increases from 13.2±0.5% for the ITO/InP cell to 15.4±0.4% for the ITO/4 nm PTCDA/p-InP cell under 1 sun, AM1.5G simulated solar illumination. The PTCDA window layer is also shown to contribute to the photocurrent by light absorption followed by exciton dissociation at the organic/inorganic semiconductor interface.
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Li et al. (2011) studied this question.
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