We apply an earlier developed method [Kuciauskaset al.,IEEE J. Photovoltaics, vol. 3, p. 1319, 2013] to analyze surface and bulk recombination in high-quality undoped single-crystal CdTe. By using two-photon excitation time-resolved photoluminescence, we determined a room-temperature minority-carrier lifetime of 360 ns. This lifetime has weak temperature dependence at 202–295 K. We also show that the high surface recombination velocity (>105cm/s) typical for single-crystal CdTe was reduced by an order of magnitude to≈ 1× 10⁴cm/s.
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Kuciauskas et al. (2014) studied this question.
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