We report on the effect of nanodot (ND) areal density and period on cross-plane thermal conductivity κ⊥ in SiGe∕Si nanodot superlattices (NDSLs). For all ND areal densities considered, we found that κ⊥ in SiGe∕Si NDSLs decreased monotonically with decreasing period and reached values lower than those in typical SiGe alloys (∼6.5Wm−1K−1). At short periods, κ⊥ was as low as 2.0–2.7Wm−1K−1 and at a fixed period, increasing the ND areal density led to lower κ⊥. This work indicates that low κ⊥ can be attained in SiGe∕Si NDSLs either with a low SL period, a high ND areal density, or both.
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Lee et al. (2008) studied this question.
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