We have fabricated flexible pentacene thin film transistors (OTFTs) and active load inverter circuits directly onto polydimethylsiloxane (PDMS) membranes. Gold electrodes, parylene C gate dielectric, and pentacene films are deposited using a room temperature and all-vapor phase process on spin-coated or cast PDMS. The channel stack on PDMS is wrinkled but crack-free. The devices have good electrical properties with saturation mobilities up to 0.2cm2∕Vs, and on/off current ratio of 5×104. The OTFT circuits on PDMS withstand modest repeated bending without electrical failure.
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Graz et al. (2009) studied this question.
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