A new 2/3 format MOS single-chip color imager, that includes 384 × 485 elements, has been developed. The device features a low-noise design; high sensitivity (9 nApp/lx for 2855 K W lamp), through employment of a complementary color filter; and wide dynamic range (over 60 dB), through introduction of a p+-layer in the photodiode and a vertical buffer circuit. The imager also features low aliasing (Moire) and clear color due to the use of a new color filter arrangement and unique multivideo lines. The die measures 10.0mm × 8.5 mm, which is realized using standard 3-µm Si-gate MOSLSI technology. Combining this small size and technological simplicity with on-wafer color filter processing, has made this device suitable for LSI volume production.
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Aoki et al. (1982) studied this question.
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