Measurement of the thermal conductance of silicon nanowires at low temperature

We have performed thermal conductance measurements on individual single-crystalline silicon suspended nanowires. The nanowires (130nm thick and 200nm wide) are fabricated by e-beam lithography and suspended between two separated pads on silicon on insulator substrate. We measure the thermal conductance of the phonon waveguide by the 3ω method. The cross section of the nanowire approaches the dominant phonon wavelength in silicon which is of the order of 100nm at 1K. Above 1.3K the conductance behaves as T3, but a deviation is measured at the lowest temperature which can be attributed to the reduced geometry.