Si(111) surfaces misoriented by 4 degrees towards (112) have been studied by scanning tunnelling microscopy. Topographs of surfaces, produced by annealing, followed by rapid quenching, reveal a temperature-dependent transition from a structure consisting of wide irregular terraces separated by small irregular clusters of double steps to a single highly ordered phase of narrow, evenly spaced terraces separated by single monatomic steps. The quenched-in phases are stable at room temperature.
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O'Mahony et al. (1993) studied this question.
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