The surface segregation of indium (In) atoms was investigated during the growth of InGaAs layers by reflection high-energy electron diffraction (RHEED). We observed that the decay constant of the RHEED-oscillation amplitude during growth depends on the growth conditions and is related, in a very simple way, to the segregation coefficient of the In atoms in the InGaAs layers.
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Martini et al. (2002) studied this question.
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