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Data are presented on high-quality buried heterostructure lasers fabricated by laser-assisted disordering of GaAs-AlGaAs quantum well heterostructures. The typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with 34 dB attenuation of longitudinal side modes.
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Epler et al. (1988) studied this question.
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