The metastable quaternary Ga(N,As,P) has been studied experimentally as well as theoretically as promising material for integration of optoelectronics with Si-based microelectronics. The optical studies reveal unusual peculiarities in the photoluminescence response and its temperature dependence. The disorder-induced features have been analyzed by means of Monte Carlo simulations. A two-energy-scale approach is necessary to achieve a satisfactory agreement between experiment and simulation.
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Karcher et al. (2010) studied this question.
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