Auger recombination in InGaAs/AlGaAs‐based MQW semiconductor lasers emitting at 980 nm

We have analysed experimentally the temperature and pressure dependence of 980 nm high‐power GaAs/AlGaAs/InGaAs semiconductor lasers in the temperature ( T ) range 80–350 K. Measurements of the threshold current and spontaneous emission allow us to study the underlying recombination occurring in the devices. We observe that up to ≈250 K the dominant recombination mechanism is radiative ( J th ∝ T ). Above this temperature there is a super‐linear increase in threshold current and a resulting decrease in the characteristic temperature, T 0 (≈130 K at room temperature). Pressure measurements at room temperature allow us to differentiate between possible recombination processes. They show that leakage into the X minima accounts for only 0.1% of the total threshold current at atmospheric pressure and room temperature. We therefore conclude that Auger recombination is the cause of the super‐linear increase in threshold current over the normal temperature range of operation.