Barrier tuning by means of a quantum, interface-induced dipole in a doping layer

We consider a sharply defined doping layer near the interface of a heterostructure on the narrow-gap side. It is shown that an interface-induced dipole moment results, whose magnitude depends on the quantum spread of the electronic charge. The result of thermionic emission measurement of the barrier height is compared with a self-consistent, nonparabolic subband calculation.