We have compared the calculated band structure and optical gain of compressively strained InGaAsN quantum-well lasers emitting at 1.3μm with GaAs or GaAsP barriers. The GaAsP barriers yield a better hole confinement in the quantum well due to GaAsP larger band gap. We show that this can result in an increase of the material gain of more than 40% at device operating temperature, which can be explained by the reduction of the hole leakage out of the quantum well.
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Carrère et al. (2005) studied this question.