Growth of GaAsN alloys by low-pressure metalorganic chemical vapor deposition using plasma-cracked NH3

We present a letter on the growth of GaAs1−xNx alloys (0<x<0.016). The layers have been grown by metalorganic chemical vapor deposition at very low pressure (25 Pa). The nitrogen source NH3 has been decomposed in a remote microwave plasma, and uncracked triethylgallium and AsH3 were used. The N uptake into the layers shows a strong dependence on the growth temperature. The competition for the group V lattice sites leads to a reduction of the N content at higher AsH3 fluxes. The GaAsN layers show a strong red shift of the photoluminescence with increasing N content.