Optically induced excitonic electroabsorption in a periodically δ-doped InGaAs/GaAs multiple quantum well structure

Large optically induced Stark shifts have been observed in a periodically δ-doped InGaAs/GaAs multiple quantum well structure. With an excitation intensity of 10 mW/cm2 we have measured an absolute quantum well absorption change of 7000 cm−1 with a corresponding differential absorption change as high as 80%. The associated maximum change in the quantum well refractive index is 0.04. This material is promising for device development for all-optical computing and signal processing.