Static and Dynamic Modeling of Single-Electron Memory for Circuit Simulation

Two compact models for single-electron memory (SEM) are proposed and validated by comparisons with the program SIMON. The approach is based on the master equation method and the orthodox theory. The specific and efficient algorithms for each model are presented. The first model is static and allows directly calculating the final number of electrons on the memory dot. The second model is dynamic, which evaluates every electron tunnel event to assess the stored charge variation and determines the writing or retention times. Both static and dynamic models are written in Verilog-A language and implemented in IC design framework. These SEM models are attractive for circuit simulation to find out the optimal biasing strategy and memory architecture.