Optimisation of α-factor for quantum dot InAs/GaAs Fabry-Perot lasers emitting at 1.3 µm

Dynamic measurements of the Henry factor αH of InAs/GaAs Fabry-Pérot lasers are compared for 3-, 5- and 10-QD layers. While αH dramatically increases with the bias current for 3- and 5-QD stacks, it only amounts to <4 for the 10-layer stack at high currents, a value similar to that of QW-lasers.