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We have investigated the surface oxidation of GaAs and subsequent oxide dissolution that is caused by ultraviolet laser light at 257 nm in an aqueous environment. This process has a chemistry distinct from the related process that uses visible light. Further, unique light-guided surface-relief structures result from the ultraviolet chemistry and the ultraviolet optical properties of the semiconductor surface.
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Podlesnik et al. (1986) studied this question.
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