We have carried out time‐integrated and spectrally‐resolved four‐wave mixing (FWM) measurements to study the effects of built‐in strain within GaN films on their exciton structures and on their coherent dynamics. Precise values for exciton energies, linewidths, and oscillation periods of quantum beats were presented. Remarkable phase shifts of the quantum beats were observed in the GaN films on a ‐sapphire, suggesting the exciton–exciton interaction caused by the reduction of the crystal symmetry. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Ishiguro et al. (2006) studied this question.
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