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December 1, 1992IEEE Electron Device Letters

Low-pressure chemical-vapor-deposited silicon-rich oxides for nonvolatile memory applications

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Abstract

The electrical and reliability characteristics of ultrathin nonstoichiometric silicon oxide (SiO/sub x/, x>

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Cite This Study

Maiti et al. (1992) studied this question.

synapsesocial.com/papers/6a82a3bb1d8eddfbf50f6b3b https://doi.org/10.1109/55.192865

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