Induced junction (inversion layer) photodiode self-calibration

The potential of a newly available oxide-n+-p inversion layer silicon photodiode as a radiometric standard is discussed. Data are presented relating the quantum efficiency of these diodes as a function of oxide and reverse bias. The theory of a simple absolute reflectometer/detector device is described and in situ reflectance corrections for one of the diodes are determined to establish its absolute response. Radiant power measured with this diode, at ten wavelengths between 295 and 1014 nm, was then compared with that measured by reference to electrical substitution radiometry.