Crossover of the preferred growth orientation of AlN/Si(001) films during off-axis radio frequency sputter growth

We found that the crystallographic orientation of AlN/Si(001) thin films crosses over from the substrate normal towards the direction of incident flux during off-axis radio frequency magnetron sputter growth. At high growth temperatures, the crystalline c-axis orientation is maintained along the substrate normal direction initially, but jumps discontinuously towards the direction of incident flux. In contrast, at low growth temperatures, the c-axis direction shifts continuously towards the incident flux direction and saturates in the middle agreeing with the tangential rule of oblique deposition, i.e., tan β=1/2 tan α, where α and β denote the angles of incident flux and column incline, respectively. Selected area transmission electron diffraction patterns are consistent with the crossover measured by in situ x-ray scattering experiments.