Electron field-emission tests have been performed on films grown by a modified microwave plasma assisted chemical vapor deposition diamond process. This modification includes the addition of N2 and O2 during the growth stage. Characterization of these films shows the presence of a disordered tetrahedral carbon structure. Raman spectroscopy indicates a disturbance in the cubic symmetry of the lattice and x-ray diffraction indicates a disordered tetrahedral structure. Field-emission testing indicate that current densities of 0.5 mA/cm2 can be obtained for applied fields of 5–8 V/μm. The results are explained in terms of a change in the band structure and the formation of electronic states in the band gap.
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Weiss et al. (1997) studied this question.
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