A new approach for the floating-gate MOS nonvolatile memory

A nonavalanche injection method to charge the floating gate of the poly-silicon stacked-gates MOS memory device is proposed. The operation principle is based on the fact that the oxide thermally grown on poly-silicon is more conductive than the oxide thermally grown on single-crystal silicon. Measurement results of the test devices on writing and erasing ability and charge retentivity are presented.