A rigorous three-dimensional (3-D) simulation method for photoresist exposure and development is presented in which light scattering due to a nonplanar topography is calculated using the Maxwell equations. The method relies on a Fourier expansion of the electromagnetic field and extends the two-dimensional (2-D) differential method to the third dimension. The model accounts for partial coherent illumination and considers the nonlinear bleaching reaction of the photoresist. For the development process, the cellular-based topography simulator has been extended. A detailed description of the theory behind the simulation method is presented, the computational efficiency is discussed, and simulation results are given.
No takes yet. Share an insight, caveat, or question.
Kirchauer et al. (1997) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: