High performance thin‐film transistors using moderately aligned semiconducting single‐wall carbon nanotubes

Thin‐film transistors (TFTs) using aligned network of semiconductor‐enriched single‐wall carbon nanotubes (s‐SWCNTs) were fabricated on a SiO 2 /Si substrate. The aligned thin film was prepared by N 2 blow in the drying process using as separated s‐SWCNT solution prepared by the agarose gel chromatography. We demonstrated that TFT using a moderately aligned s‐SWCNT thin film shows drastically improved transfer characteristics. The TFT simultaneously showed a mobility of 19.6 cm 2 /(V · s) and an on/off ratio of 1.7 × 10 5 , although the purity of semiconductor used in this work was not higher than 90%. Because the alignment process is very easy and effective, it is expected that moderately aligned s‐SWCNT film could be used to practical circuits made of s‐SWCNT TFTs.