Integrated picosecond photoconductors produced on bulk Si substrates

We report optoelectronic cross-correlation measurements of the response of photoconductor pulsers and sampling gates formed on Si wafers. These photoconductors were fabricated with standard integrated circuit fabrication techniques followed by shadow-masked ion beam irradiation. Successful ion beam irradiations were performed with 2 MeV 2H, 6 MeV He, and 30 MeV O with doses of 1015 ion/cm2. Deep damage was necessary to eliminate long-lived background currents in the cross correlations. Carrier lifetimes of 96, 47, and 29 ps were observed in photoconductors with carrier mobilities of ∼250 cm2/Vs.