The epitaxial growth of Mg-doped GaAs by the organometallic vapour phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.
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Lewis et al. (1982) studied this question.