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Band-edge optical nonlinearities, which appear in bulk semiconductor materials, are calculated up to room temperature. A quantitative analysis of the optical constants and the maximum nonlinear dispersive changes {Δ}n({ω}) as well as the temperature-dependent ionization of the exciton up to room-temperature GaAs are presented by solving the Bethe-Salpeter equation for the complex nonlinear dielectric function. The numerical results using the microscopic theory are compared with experimental data and found to be in very good agreement.
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Löwenau et al. (1995) studied this question.
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