Answers are grounded in this paper and cite their sources.
We report a near infrared (NIR) single photon detector (SPD) using an InGaAs/InP avalanche photodiode (APD) operated with a bipolar rectangular gating signal. The use of the bipolar gating pulse enabled us to operate the APD well below the breakdown voltage during the gate-off time. As a result, it permits to decrease the lifetime of the trapped carriers, and then reduces the after-pulse noise of the detector. At a repetition rate of 200 MHz, the after-pulse probability is 8.2% less comparing to that of conventional gating signal SPD.
No takes yet. Share an insight, caveat, or question.
Bouzid et al. (2012) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: