A new model of the semiconductor-insulator interface states is proposed. Transitions between free and bound states of a system consisting of a charged center in the insulator and an electron in the semiconductor are considered in the model. By assuming that the charged centers are located at different distances from the interface, the occurrence of a continuous distribution of Si/SiO2 interface states over the band gap of the semiconductor and the sharp decrease of the electron capture cross section as the binding energy of the states tends towards the conduction band edge are explained.
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E. Kamieniecki (1979) studied this question.
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