Nb3Ge/oxide/Pb Josephson tunnel junctions have been fabricated on magnetron-sputtered Nb3Ge thin films using standard photolithography and a CF4 plasma cleaning technique. Their Josephson properties have also been investigated. High-quality junctions with a well-defined large gap (∼5 mV) and low excess conductance (Vm=35 mV) can be obtained by adopting large-grained high-Tc films. These junctions are found to have an Nb3Ge magnetic penetration depth of less than 200 nm, and a specific capacitance a little lower than that for Nb/Nb oxide/Pb junctions.
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Tanabe et al. (1984) studied this question.
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