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The form of the modulation of the critical dc Josephson current Ic of a tunnel junction by an applied magnetic field B is shown to be uniquely related to the supercurrent density distribution within the junction integrated over the direction of B. This relation is used to quantitatively determine these "current-density profiles" from Ic(B) measured for Sn-oxide-Sn junctions with barriers prepared by plasma-discharge oxidation and for the novel light-sensitive junctions described by Giaever, in which the tunneling barrier is formed by an evaporated film of CdS.
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Dynes et al. (1971) studied this question.
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